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Infineon CoolMOS Type N-Channel MOSFET & Diode, 97 A, 650 V Enhancement, 3-Pin TO-247 IPW60R090CFD7XKSA1

RS 제품 번호:: 220-7454
제조사 부품 번호:: IPW60R090CFD7XKSA1
제조업체:: Infineon

Infineon CoolMOS Type N-Channel MOSFET & Diode, 97 A, 650 V Enhancement, 3-Pin TO-247 IPW60R090CFD7XKSA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩16,769.60

재고있음

96 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
2 - 6	₩8,384.80	₩16,769.60
8 - 14	₩8,168.60	₩16,337.20
16 +	₩8,046.40	₩16,092.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 220-7454
제조사 부품 번호:: IPW60R090CFD7XKSA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	97A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247
	Series	CoolMOS
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	90mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	51nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	125W
	Maximum Operating Temperature	150°C
	Length	16.13mm
	Standards/Approvals	No
	Height	21.1mm
	Width	5.21 mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 97A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247
	Series CoolMOS
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 90mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 51nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 125W
	Maximum Operating Temperature 150°C
	Length 16.13mm
	Standards/Approvals No
	Height 21.1mm
	Width 5.21 mm
	Automotive Standard No

Datasheet - IPW60R090CFD7XKSA1

The Infineon 600V Cool MOS CFD7 is Infineon’s latest high voltage super junction MOSFET technology with integrated fast body diode, completing the Cool MOS 7 series. Cool MOS CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Ultra-fast body diode

Best-in-class reverse recovery charge (Qrr)

Improved reverse diode dv/dt and dif/dt ruggedness

Lowest FOM RDS(on) x Qg and Eoss

Best-in-class RDS(on)/package combinations

Best-in-class hard commutation ruggedness

Highest reliability for resonant topologies

Highest efficiency with outstanding ease-of-use/performance trade-off

Enabling increased power density solutions

Infineon CoolMOS Type N-Channel MOSFET & Diode, 97 A, 650 V Enhancement, 3-Pin TO-247 IPW60R090CFD7XKSA1

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