ROHM Type N-Channel MOSFET, 1.6 A, 800 V Enhancement, 3-Pin TO-220FM R8002KNXC7G
- RS 제품 번호:
- 235-2698
- 제조사 부품 번호:
- R8002KNXC7G
- 제조업체:
- ROHM
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩17,160.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 45 | ₩3,432.00 | ₩17,160.00 |
| 50 - 95 | ₩3,377.40 | ₩16,887.00 |
| 100 - 245 | ₩3,283.80 | ₩16,419.00 |
| 250 - 495 | ₩3,225.30 | ₩16,126.50 |
| 500 + | ₩3,159.00 | ₩15,795.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 235-2698
- 제조사 부품 번호:
- R8002KNXC7G
- 제조업체:
- ROHM
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.6A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220FM | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.2Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Maximum Power Dissipation Pd | 28W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 5mm | |
| Standards/Approvals | No | |
| Height | 29.87mm | |
| Length | 10.3mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.6A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220FM | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.2Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Maximum Power Dissipation Pd 28W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 5mm | ||
Standards/Approvals No | ||
Height 29.87mm | ||
Length 10.3mm | ||
Automotive Standard No | ||
The ROHM R8xxxKNx series are high-speed switching products, super Junction MOSFET, that place an emphasis on high efficiency. It achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.
Low on-resistance
Ultra fast switching speed
Parallel use is easy
Pb-free plating
RoHS compliant
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