ROHM Type N-Channel MOSFET, 7 A, 600 V Enhancement, 3-Pin TO-220FM R6007ENX

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Subtotal (1 pack of 10 units)*

₩17,615.60

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한팩당
한팩당*
10 - 40₩1,761.56₩17,615.60
50 - 90₩1,718.32₩17,183.20
100 - 190₩1,675.08₩16,750.80
200 - 390₩1,631.84₩16,318.40
400 +₩1,592.36₩15,923.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
172-0548
제조사 부품 번호:
R6007ENX
제조업체:
ROHM
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브랜드

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220FM

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

1.20Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Typical Gate Charge Qg @ Vgs

20nC

Maximum Power Dissipation Pd

40W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Width

4.8 mm

Length

10.3mm

Standards/Approvals

RoHS

Height

15.4mm

COO (Country of Origin):
JP
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Low on-resistance.

Fast switching speed.

Gate-source voltage (VGSS) guaranteed to be ±20V.

Drive circuits can be simple.

Parallel use is easy.

Pb-free lead plating

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