제조사부품번호

ROHM N-Channel MOSFET, 11 A, 650 V, 3-Pin DPAK R6511END3TL1

RS 제품 번호:: 235-2693
제조사 부품 번호:: R6511END3TL1
제조업체:: ROHM

ROHM N-Channel MOSFET, 11 A, 650 V, 3-Pin DPAK R6511END3TL1

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RS 제품 번호:: 235-2693
제조사 부품 번호:: R6511END3TL1
제조업체:: ROHM

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	ROHM
	Channel Type	N
	Maximum Continuous Drain Current	11 A
	Maximum Drain Source Voltage	650 V
	Package Type	DPAK (TO-252)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	0.4 Ω
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Number of Elements per Chip	1

	모두 선택
	브랜드 ROHM
	Channel Type N
	Maximum Continuous Drain Current 11 A
	Maximum Drain Source Voltage 650 V
	Package Type DPAK (TO-252)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 0.4 Ω
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Number of Elements per Chip 1

Datasheet - R6511END3TL1

The ROHM R6xxxENx series are low-noise products, super Junction MOSFET, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.

Low on-resistance

Fast switching speed

Parallel use is easy

Pb-free plating

RoHS compliant

ROHM N-Channel MOSFET, 11 A, 650 V, 3-Pin DPAK R6511END3TL1

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