ROHM N-Channel MOSFET, 7 A, 650 V Enhancement, 3-Pin TO-252 R6507END3TL1
- RS 제품 번호:
- 235-2685
- 제조사 부품 번호:
- R6507END3TL1
- 제조업체:
- ROHM
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- RS 제품 번호:
- 235-2685
- 제조사 부품 번호:
- R6507END3TL1
- 제조업체:
- ROHM
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 7 A | |
| Maximum Drain Source Voltage (Vds) | 650 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-252 | |
| Automotive Standard | No | |
| Height | 10.4 mm | |
| Length | 6.4 mm | |
| Maximum Drain Source Resistance (Rds) | 665 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 20 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 78 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 20 nC | |
| Width | 2.4 mm | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 7 A | ||
Maximum Drain Source Voltage (Vds) 650 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-252 | ||
Automotive Standard No | ||
Height 10.4 mm | ||
Length 6.4 mm | ||
Maximum Drain Source Resistance (Rds) 665 mΩ | ||
Maximum Gate Source Voltage (Vgs) 20 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 78 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 20 nC | ||
Width 2.4 mm | ||
The ROHM R6xxxENx series are low-noise products, super Junction MOSFET, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.
Low on-resistance
Fast switching speed
Parallel use is easy
Pb-free plating
RoHS compliant
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