Infineon Isolated F4 Type N-Channel MOSFET, 25 A, 1200 V, 2-Pin AG-EASY2B F445MR12W1M1B76BPSA1
- RS 제품 번호:
- 234-8967
- 제조사 부품 번호:
- F445MR12W1M1B76BPSA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 tray of 24 units)*
₩5,562,048.00
일시적 품절
- 2027년 1월 11일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tray* |
|---|---|---|
| 24 - 24 | ₩231,752.00 | ₩5,562,038.00 |
| 48 - 48 | ₩220,164.00 | ₩5,283,922.00 |
| 72 + | ₩209,156.00 | ₩5,019,740.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 234-8967
- 제조사 부품 번호:
- F445MR12W1M1B76BPSA1
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | AG-EASY2B | |
| Series | F4 | |
| Pin Count | 2 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Maximum Power Dissipation Pd | 20mW | |
| Typical Gate Charge Qg @ Vgs | 0.062μC | |
| Forward Voltage Vf | 5.65V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Height | 16.4mm | |
| Length | 62.8mm | |
| Standards/Approvals | 60749 and 60068, IEC 60747 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type AG-EASY2B | ||
Series F4 | ||
Pin Count 2 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Maximum Power Dissipation Pd 20mW | ||
Typical Gate Charge Qg @ Vgs 0.062μC | ||
Forward Voltage Vf 5.65V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Height 16.4mm | ||
Length 62.8mm | ||
Standards/Approvals 60749 and 60068, IEC 60747 | ||
Automotive Standard No | ||
The Infineon IGBT module has a 4 N-Channel (Half Bridge) FET Type works with 1200V Drain to Source Voltage and 75A continuous drain current.
Chassis mount
-40°C to 150°C operating temperature
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