Infineon BSC N-Channel MOSFET, 114 A, 150 V N, 8-Pin SuperSO8 5 x 6 BSC074N15NS5ATMA1
- RS 제품 번호:
- 234-6989
- 제조사 부품 번호:
- BSC074N15NS5ATMA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (2 units, in packs of 2)*
₩19,560.00
재고있음
- 4,550 개 단위 배송 준비 완료
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 8 | ₩9,780.00 | ₩19,560.00 |
| 10 - 98 | ₩9,590.00 | ₩19,180.00 |
| 100 - 248 | ₩9,390.00 | ₩18,780.00 |
| 250 - 498 | ₩9,220.00 | ₩18,440.00 |
| 500 + | ₩9,030.00 | ₩18,060.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 234-6989
- 제조사 부품 번호:
- BSC074N15NS5ATMA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 114A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | BSC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.2mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 46W | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.1mm | |
| Standards/Approvals | No | |
| Length | 5.35mm | |
| Height | 1.2mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 114A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type SuperSO8 5 x 6 | ||
Series BSC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.2mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 46W | ||
Maximum Operating Temperature 150°C | ||
Width 6.1mm | ||
Standards/Approvals No | ||
Length 5.35mm | ||
Height 1.2mm | ||
Automotive Standard No | ||
Infineon BSC Series MOSFET, 150V Drain Source Voltage, 114A Continuous Drain Current - BSC074N15NS5ATMA1
This MOSFET is a high-voltage switching transistor designed for surface-mount power applications where low conduction losses and high continuous current are required. It operates across a wide temperature range and is suited to circuits requiring robust gate-drive margins and significant power-dissipation capacity.
Features and Benefits:
• 150 V drain rating enables high-voltage switching applications
• 9.2 mΩ RDS(on) reduces conduction losses for efficient operation
• 114 A continuous current capability supports high-load systems
• 46 W power dissipation allows sustained thermal loading
• 10 nC typical gate charge minimises switching energy losses
• VGS tolerance up to 20 V permits flexible gate-drive levels
• 9.2 mΩ RDS(on) reduces conduction losses for efficient operation
• 114 A continuous current capability supports high-load systems
• 46 W power dissipation allows sustained thermal loading
• 10 nC typical gate charge minimises switching energy losses
• VGS tolerance up to 20 V permits flexible gate-drive levels
Applications
• Suitable for DC-DC converters handling significant current
• Ideal for synchronous rectification in power supplies
• Used with motor controllers requiring high continuous current
• Can be used for telecoms power distribution modules
• Suitable for industrial switching in high-voltage environments
• Ideal for synchronous rectification in power supplies
• Used with motor controllers requiring high continuous current
• Can be used for telecoms power distribution modules
• Suitable for industrial switching in high-voltage environments
What ambient temperatures can it function within?
It operates from −55 °C up to 150 °C.
What mounting style is required for circuit assembly?
It is intended for surface mounting in a SuperSO8 5x6 package.
How many pins does the device present for PCB layout?
The package uses eight pins for electrical and thermal connection.
What is the forward voltage during conduction?
The forward voltage under specified conditions is 1.2 V.
What physical footprint and profile should designers allow?
The device measures 5.35 mm length by 6.1 mm width with a height of 1.2 mm.
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