Infineon OptiMOS 5 Type N-Channel MOSFET, 49 A, 80 V N, 8-Pin SuperSO

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RS 제품 번호:
214-4327
제조사 부품 번호:
BSC117N08NS5ATMA1
제조업체:
Infineon
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모두 선택

브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

49A

Maximum Drain Source Voltage Vds

80V

Package Type

SuperSO

Series

OptiMOS 5

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11.7mΩ

Channel Mode

N

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

50W

Typical Gate Charge Qg @ Vgs

15nC

Maximum Operating Temperature

150°C

Height

1.2mm

Standards/Approvals

No

Length

5.35mm

Automotive Standard

No

Infineon OptiMOS 5 Series MOSFET, 80V Drain Source Voltage, 49A Continuous Drain Current - BSC117N08NS5ATMA1


This MOSFET is a surface-mount N-channel power transistor designed for high-current switching in compact electronic assemblies. It operates across a wide ambient range and is suited to applications requiring efficient conduction and fast switching behaviour. The device is supplied in an eight-pin SuperSO package and is intended for use where low on-resistance and considerable drain current capability are required.

Features and Benefits:


• 11.7mΩ Rds(on) enabling reduced conduction losses
• 49A continuous drain current for heavy-load handling
• 80V drain-source rating for high-voltage switching
• 15nC gate charge for responsive switching control
• 50W maximum power dissipation for robust thermal performance

Applications


• Suitable for high-efficiency power supplies in electronics
• Ideal for DC-DC converters and synchronous rectification
• Used with motor controllers requiring elevated current capacity
• Can be used for telecoms and server power distribution
• Suitable for compact, high-density surface-mount assemblies

What temperature extremes can it withstand during operation?


It is specified to operate from -55 °C up to 150 °C, accommodating harsh thermal conditions.

How does the package aid board-level design?


The SuperSO eight-pin layout and low-profile 1.2mm height permit dense component placement and low-inductance routing.

What is the typical forward voltage during conduction?


The device exhibits a forward voltage of 1.1V under specified conduction conditions, affecting conduction loss calculations.

What maximum gate stress should the design allow?


The gate should be driven within ±20V to avoid exceeding the maximum gate-source voltage rating.

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