Infineon OptiMOS 5 Type N-Channel MOSFET, 56 A, 150 V N, 8-Pin SuperSO BSC160N15NS5ATMA1
- RS 제품 번호:
- 214-4330
- 제조사 부품 번호:
- BSC160N15NS5ATMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩23,932.40
현재 액세스할 수 없는 재고 정보
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 1240 | ₩2,393.24 | ₩23,932.40 |
| 1250 - 2490 | ₩2,333.08 | ₩23,330.80 |
| 2500 + | ₩2,297.36 | ₩22,973.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 214-4330
- 제조사 부품 번호:
- BSC160N15NS5ATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | OptiMOS 5 | |
| Package Type | SuperSO | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 96W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.2mm | |
| Width | 6.1 mm | |
| Length | 5.35mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series OptiMOS 5 | ||
Package Type SuperSO | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 96W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.2mm | ||
Width 6.1 mm | ||
Length 5.35mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon OptiMOS MOSFET offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.
It is ideal for hot-swap and e-fuse applications
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