STMicroelectronics STB37N60 N-Channel MOSFET, 12 A, 1.2 kV Enhancement, 3-Pin H2PAK STH12N120K5-2
- RS 제품 번호:
- 233-3040
- 제조사 부품 번호:
- STH12N120K5-2
- 제조업체:
- STMicroelectronics
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대량 구매 할인 받기
5000개 더 담고 ₩2,130,000.00 할인 받기
View bulk pricing optionsSubtotal (1 reel of 1000 units)*
₩21,328,000.00
재고있음
- 추가로 2026년 11월 16일 부터 1,000 개 단위 배송
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수량 | 한팩당 | 릴당* | 절감 |
|---|---|---|---|
| 1000 - 4000 | ₩21,328.00 | ₩21,328,000.00 | - |
| 5000 + | ₩20,902.00 | ₩20,901,400.00 | ₩2,130,000.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 233-3040
- 제조사 부품 번호:
- STH12N120K5-2
- 제조업체:
- STMicroelectronics
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | H2PAK | |
| Series | STB37N60 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 690mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 250W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 44.2nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 15.8mm | |
| Height | 4.8mm | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type H2PAK | ||
Series STB37N60 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 690mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 250W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 44.2nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 15.8mm | ||
Height 4.8mm | ||
Length 10.4mm | ||
Automotive Standard No | ||
The STMicroelectronics very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Worldwide best FOM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected
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