제조사부품번호

onsemi SUPERFET III Type N-Channel MOSFET, 62 A, 650 V Enhancement, 4-Pin TO-247

RS 제품 번호:: 230-9084
제조사 부품 번호:: NTH4LN040N65S3H
제조업체:: onsemi

onsemi SUPERFET III Type N-Channel MOSFET, 62 A, 650 V Enhancement, 4-Pin TO-247

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대량 구매 할인 기용 가능

Subtotal (1 tube of 450 units)*

₩6,021,828.00

일시적 품절

2026년 5월 18일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
450 - 450	₩13,381.84	₩6,021,828.00
900 - 4050	₩13,114.88	₩5,901,357.60
4500 +	₩12,851.68	₩5,783,340.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 230-9084
제조사 부품 번호:: NTH4LN040N65S3H
제조업체:: onsemi

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모두 선택	제품 정보	값
	브랜드	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	62A
	Maximum Drain Source Voltage Vds	650V
	Series	SUPERFET III
	Package Type	TO-247
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	40mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	379W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	132nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Width	2.4 mm
	Length	10.2mm
	Standards/Approvals	No
	Height	13.28mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 62A
	Maximum Drain Source Voltage Vds 650V
	Series SUPERFET III
	Package Type TO-247
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 40mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 379W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 132nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Width 2.4 mm
	Length 10.2mm
	Standards/Approvals No
	Height 13.28mm
	Automotive Standard No

Datasheet - NTH4LN040N65S3H

The ON Semiconductor series SUPERFET III MOSFET is new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET FAST series helps minimize various power systems and improve system efficiency.

100% Avalanche Tested

RoHS Compliant

Typ. RDS(on) = 32 mΩ

Internal Gate Resistance: 0.7 Ω

Ultra Low Gate Charge (Typ. Qg = 132 nC)

700 V @ TJ = 150 oC

onsemi SUPERFET III Type N-Channel MOSFET, 62 A, 650 V Enhancement, 4-Pin TO-247

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