제조사부품번호

onsemi NTH4LN019N Type N-Channel MOSFET, 75 A, 650 V Enhancement, 4-Pin TO-247

RS 제품 번호:: 221-6707
제조사 부품 번호:: NTH4LN019N65S3H
제조업체:: onsemi

onsemi NTH4LN019N Type N-Channel MOSFET, 75 A, 650 V Enhancement, 4-Pin TO-247

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대량 구매 할인 기용 가능

Subtotal (1 tube of 450 units)*

₩12,714,534.00

일시적 품절

2026년 6월 01일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
450 - 1800	₩28,254.52	₩12,714,618.60
2250 +	₩27,688.64	₩12,460,311.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 221-6707
제조사 부품 번호:: NTH4LN019N65S3H
제조업체:: onsemi

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	75A
	Maximum Drain Source Voltage Vds	650V
	Series	NTH4LN019N
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	19.3mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	625W
	Maximum Gate Source Voltage Vgs	30 V
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	282nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Length	15.8mm
	Width	5.2 mm
	Standards/Approvals	These Devices are Pb-Free and are RoHS
	Height	22.74mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 75A
	Maximum Drain Source Voltage Vds 650V
	Series NTH4LN019N
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 19.3mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 625W
	Maximum Gate Source Voltage Vgs 30 V
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 282nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Length 15.8mm
	Width 5.2 mm
	Standards/Approvals These Devices are Pb-Free and are RoHS
	Height 22.74mm
	Automotive Standard No

Datasheet - NTH4LN019N65S3H

The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.

Ultra low gate charge

low effective output capacitance 2495 pF

100% avalanche tested

onsemi NTH4LN019N Type N-Channel MOSFET, 75 A, 650 V Enhancement, 4-Pin TO-247

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