onsemi NTH4LN095N Type N-Channel MOSFET, 30 A, 650 V Enhancement, 4-Pin TO-247 NTH4LN095N65S3H
- RS 제품 번호:
- 221-6712
- 제조사 부품 번호:
- NTH4LN095N65S3H
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩25,455.20
마지막 RS 재고
- 최종적인 430 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 8 | ₩12,727.60 | ₩25,455.20 |
| 10 - 98 | ₩12,426.80 | ₩24,853.60 |
| 100 - 248 | ₩12,126.00 | ₩24,252.00 |
| 250 - 498 | ₩11,834.60 | ₩23,669.20 |
| 500 + | ₩11,562.00 | ₩23,124.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 221-6712
- 제조사 부품 번호:
- NTH4LN095N65S3H
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | NTH4LN095N | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 95mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 208W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.2 mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Height | 22.74mm | |
| Length | 15.8mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series NTH4LN095N | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 95mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 208W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 5.2 mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Height 22.74mm | ||
Length 15.8mm | ||
Automotive Standard No | ||
The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Ultra low gate charge
low effective output capacitance 522 pF
100% avalanche tested
관련된 링크들
- onsemi NTH4LN095N Type N-Channel MOSFET, 30 A, 650 V Enhancement, 4-Pin TO-247
- onsemi NTH4LN067N Type N-Channel MOSFET, 40 A, 650 V Enhancement, 4-Pin TO-247 NTH4LN067N65S3H
- onsemi NTH4LN019N Type N-Channel MOSFET, 75 A, 650 V Enhancement, 4-Pin TO-247 NTH4LN019N65S3H
- onsemi NTH4LN067N Type N-Channel MOSFET, 40 A, 650 V Enhancement, 4-Pin TO-247
- onsemi NTH4LN019N Type N-Channel MOSFET, 75 A, 650 V Enhancement, 4-Pin TO-247
- onsemi SUPERFET III Type N-Channel MOSFET, 62 A, 650 V Enhancement, 4-Pin TO-247 NTH4LN040N65S3H
- onsemi NTH Type N-Channel MOSFET, 67 A, 650 V Enhancement, 4-Pin TO-247-4L NTH4L023N065M3S
- onsemi SUPERFET III Type N-Channel MOSFET, 62 A, 650 V Enhancement, 4-Pin TO-247