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onsemi NTH4LN095N Type N-Channel MOSFET, 30 A, 650 V Enhancement, 4-Pin TO-247 NTH4LN095N65S3H

RS Stock No.:: 221-6712
Mfr. Part No.:: NTH4LN095N65S3H
Brand:: onsemi

onsemi NTH4LN095N Type N-Channel MOSFET, 30 A, 650 V Enhancement, 4-Pin TO-247 NTH4LN095N65S3H

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Bulk discount available

Subtotal (1 pack of 2 units)*

₩25,455.20

마지막 RS 재고

최종적인 430 개 unit(s)이 배송 준비 됨

Units	Per unit	Per Pack*
2 - 8	₩12,727.60	₩25,455.20
10 - 98	₩12,426.80	₩24,853.60
100 - 248	₩12,126.00	₩24,252.00
250 - 498	₩11,834.60	₩23,669.20
500 +	₩11,562.00	₩23,124.00

*price indicative

RS Stock No.:: 221-6712
Mfr. Part No.:: NTH4LN095N65S3H
Brand:: onsemi

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	650V
	Series	NTH4LN095N
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	95mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	58nC
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	208W
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Operating Temperature	175°C
	Length	15.8mm
	Width	5.2 mm
	Standards/Approvals	Pb-Free, RoHS
	Height	22.74mm
	Automotive Standard	No

	Select all
	브랜드 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 650V
	Series NTH4LN095N
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 95mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 58nC
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 208W
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Operating Temperature 175°C
	Length 15.8mm
	Width 5.2 mm
	Standards/Approvals Pb-Free, RoHS
	Height 22.74mm
	Automotive Standard No

Datasheet - NTH4LN095N65S3H

The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.

Ultra low gate charge

low effective output capacitance 522 pF

100% avalanche tested

onsemi NTH4LN095N Type N-Channel MOSFET, 30 A, 650 V Enhancement, 4-Pin TO-247 NTH4LN095N65S3H

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