onsemi SUPERFET III Type N-Channel MOSFET, 10 A, 650 V N, 3-Pin TO-252 NTD360N65S3H
- RS 제품 번호:
- 229-6453
- 제조사 부품 번호:
- NTD360N65S3H
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩19,533.20
재고있음
- 14,865 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 5 | ₩3,906.64 | ₩19,533.20 |
| 10 - 95 | ₩3,786.32 | ₩18,931.60 |
| 100 - 245 | ₩3,669.76 | ₩18,348.80 |
| 250 - 495 | ₩3,594.56 | ₩17,972.80 |
| 500 + | ₩3,515.60 | ₩17,578.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 229-6453
- 제조사 부품 번호:
- NTD360N65S3H
- 제조업체:
- onsemi
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-252 | |
| Series | SUPERFET III | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 17.5nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 6.22mm | |
| Length | 6.73mm | |
| Width | 2.39 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-252 | ||
Series SUPERFET III | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 17.5nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 6.22mm | ||
Length 6.73mm | ||
Width 2.39 mm | ||
Automotive Standard No | ||
Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 10 A, 360 mΩ, DPAK
SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III FAST MOSFET series helps minimize various power systems and improve system efficiency.
Features
• 700 V @ TJ = 150°C
• Ultra Low Gate Charge (Typ. Qg = 17.5 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 180 pF)
• Fast switching performance with robust body diode
• 100% Avalanche Tested
• RoHS Compliant
• Typ. RDS(on) = 296 m
• Internal Gate Resistance: 0.9
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