onsemi SUPERFET III Type N-Channel MOSFET & Diode, 13 A, 800 V Enhancement, 3-Pin TO-252 NTD360N80S3Z

RS Stock No.:: 205-2498
Mfr. Part No.:: NTD360N80S3Z
Brand:: onsemi

onsemi SUPERFET III Type N-Channel MOSFET & Diode, 13 A, 800 V Enhancement, 3-Pin TO-252 NTD360N80S3Z

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Bulk discount available

Subtotal (1 pack of 5 units)*

₩23,631.60

마지막 RS 재고

최종적인 2,500 개 unit(s)이 배송 준비 됨

Units	Per unit	Per Pack*
5 - 620	₩4,726.32	₩23,631.60
625 - 1245	₩4,609.76	₩23,048.80
1250 +	₩4,538.32	₩22,691.60

*price indicative

RS Stock No.:: 205-2498
Mfr. Part No.:: NTD360N80S3Z
Brand:: onsemi

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	브랜드	onsemi
	Product Type	MOSFET & Diode
	Channel Type	Type N
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	800V
	Series	SUPERFET III
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	360mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	25.3nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	96W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Width	5.55 mm
	Length	9.35mm
	Height	2.39mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	브랜드 onsemi
	Product Type MOSFET & Diode
	Channel Type Type N
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 800V
	Series SUPERFET III
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 360mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 25.3nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 96W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Width 5.55 mm
	Length 9.35mm
	Height 2.39mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - NTD360N80S3Z

The ON Semiconductor SUPERFET III series N-channel 800V MOSFET is optimized for primary switch of fly back converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to its optimized design. In addition, internal zener diode significantly improves ESD capability. This new family enables make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as Laptop adapter, Audio, Lighting, ATX power and industrial power supplies.

Continuous Drain Current rating is 13A

Drain to source on resistance rating is 360mohm

Ultra low gate charge

Low stored energy in output capacitance

100% avalanche tested

Package type is D-PAK

onsemi SUPERFET III Type N-Channel MOSFET & Diode, 13 A, 800 V Enhancement, 3-Pin TO-252 NTD360N80S3Z

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