제조사부품번호

onsemi SUPERFET III Type N-Channel MOSFET & Diode, 13 A, 800 V Enhancement, 3-Pin TO-252 NTD360N80S3Z

RS 제품 번호:: 205-2498
제조사 부품 번호:: NTD360N80S3Z
제조업체:: onsemi

onsemi SUPERFET III Type N-Channel MOSFET & Diode, 13 A, 800 V Enhancement, 3-Pin TO-252 NTD360N80S3Z

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩23,631.60

마지막 RS 재고

최종적인 2,500 개 unit(s)이 배송 준비 됨

수량	한팩당	한팩당*
5 - 620	₩4,726.32	₩23,631.60
625 - 1245	₩4,609.76	₩23,048.80
1250 +	₩4,538.32	₩22,691.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 205-2498
제조사 부품 번호:: NTD360N80S3Z
제조업체:: onsemi

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET & Diode
	Channel Type	Type N
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-252
	Series	SUPERFET III
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	360mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	25.3nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	96W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Length	9.35mm
	Height	2.39mm
	Standards/Approvals	No
	Width	5.55 mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Product Type MOSFET & Diode
	Channel Type Type N
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-252
	Series SUPERFET III
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 360mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 25.3nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 96W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Length 9.35mm
	Height 2.39mm
	Standards/Approvals No
	Width 5.55 mm
	Automotive Standard No

Datasheet - NTD360N80S3Z

The ON Semiconductor SUPERFET III series N-channel 800V MOSFET is optimized for primary switch of fly back converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to its optimized design. In addition, internal zener diode significantly improves ESD capability. This new family enables make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as Laptop adapter, Audio, Lighting, ATX power and industrial power supplies.

Continuous Drain Current rating is 13A

Drain to source on resistance rating is 360mohm

Ultra low gate charge

Low stored energy in output capacitance

100% avalanche tested

Package type is D-PAK

onsemi SUPERFET III Type N-Channel MOSFET & Diode, 13 A, 800 V Enhancement, 3-Pin TO-252 NTD360N80S3Z

관련된 링크들