Vishay E N-Channel Power MOSFET, 47 A, 700 V Enhancement, 3-Pin TO-247AD SQW44N65EF-GE3

RS 제품 번호:: 228-2977
제조사 부품 번호:: SQW44N65EF-GE3
제조업체:: Vishay

Vishay E N-Channel Power MOSFET, 47 A, 700 V Enhancement, 3-Pin TO-247AD SQW44N65EF-GE3

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Subtotal (1 unit)*

₩13,600.00

308 개 단위 배송 준비 완료

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1 - 4	₩13,600.00
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100 +	₩12,040.00

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RS 제품 번호:: 228-2977
제조사 부품 번호:: SQW44N65EF-GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	47A
	Maximum Drain Source Voltage Vds	700V
	Package Type	TO-247AD
	Series	E
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	73mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	177nC
	Maximum Power Dissipation Pd	500W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Vishay
	Channel Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 47A
	Maximum Drain Source Voltage Vds 700V
	Package Type TO-247AD
	Series E
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 73mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 177nC
	Maximum Power Dissipation Pd 500W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - SQW44N65EF-GE3

Vishay Series E Power MOSFET, 700V Drain Source Voltage, 47A Continuous Drain Current - SQW44N65EF-GE3

This power MOSFET is a high-voltage switching transistor designed for demanding electronic applications requiring substantial current handling and elevated temperature endurance. It is an N‑channel enhancement device supplied in a through-hole TO-247AD package and suited to power conversion, motor drives and industrial switching environments where compact, mountable components are needed.

Features and Benefits:

• 700V drain rating enables high-voltage system designs
• 47A continuous drain current supports heavy-load switching
• 73mΩ Rds(on) minimises conduction losses under load
• 177nC typical gate charge reduces switching losses
• 500W maximum power dissipation handles elevated thermal load
• -55 to 175°C operating range sustains wide temperature extremes

Applications

• Suitable for high-voltage power supplies and inverters
• Ideal for traction or industrial motor drive stages
• Used for hard-switching and soft-switching topologies
• Can be used for renewable energy converter electronics
• Appropriate for automotive electronic modules requiring AEC‑Q101

What mounting considerations apply to this component?

The device uses a through-hole mount in a TO-247AD package, allowing direct heatsinking with a suitable insulated or bare tab and conventional screw mounting for thermal management.

How does gate handling affect switching performance?

With a typical gate charge of 177nC, gate-driver selection must provide sufficient peak current to achieve the required dv/dt and minimise transition losses.

What thermal stresses can it tolerate during operation?

The transistor is specified to operate between -55°C and 175°C, so PCB layout and cooling must be designed to keep junction temperature within that range under rated dissipation.

Are there any automotive considerations for usage?

It meets AEC‑Q101 qualification, making it suitable for automotive electronic systems where the specified qualification is required.