Vishay E N-Channel MOSFET, 62 A, 700 V Enhancement, 3-Pin TO-247 SQW61N65EF-GE3
- RS 제품 번호:
- 228-2978
- 제조사 부품 번호:
- SQW61N65EF-GE3
- 제조업체:
- Vishay
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- RS 제품 번호:
- 228-2978
- 제조사 부품 번호:
- SQW61N65EF-GE3
- 제조업체:
- Vishay
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | E | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 229nC | |
| Forward Voltage Vf | 900mV | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 625W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series E | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 229nC | ||
Forward Voltage Vf 900mV | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 625W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay automotive E Series Power MOSFET reduced switching and conduction losses.
Fast body diode MOSFET using Automotive
Grade E series technology
Reduced trr, Qrr, and IRRM
Low figure-of-merit (FOM) Ron x Qg
Low input capacitance (Ciss)
Low switching losses due to reduced Qrr
175 °C operating temperature
AEC-Q101 qualified
Ultra low
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