Vishay E N-Channel Power MOSFET, 47 A, 700 V Enhancement, 3-Pin TO-247AD SQW44N65EF-GE3
- RS 제품 번호:
- 228-2976
- 제조사 부품 번호:
- SQW44N65EF-GE3
- 제조업체:
- Vishay
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (30 units, in tubes of 30)*
₩278,760.00
재고있음
- 추가로 2026년 10월 05일 부터 300 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 30 - 90 | ₩9,292.00 | ₩278,778.00 |
| 120 - 240 | ₩9,014.00 | ₩270,420.00 |
| 270 + | ₩8,744.00 | ₩262,302.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 228-2976
- 제조사 부품 번호:
- SQW44N65EF-GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 47A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-247AD | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 73mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 177nC | |
| Maximum Power Dissipation Pd | 500W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 900mV | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 47A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-247AD | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 73mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 177nC | ||
Maximum Power Dissipation Pd 500W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 900mV | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Vishay Series E Power MOSFET, 700V Drain Source Voltage, 47A Continuous Drain Current - SQW44N65EF-GE3
This power MOSFET is a high-voltage switching transistor designed for demanding electronic applications requiring substantial current handling and elevated temperature endurance. It is an N‑channel enhancement device supplied in a through-hole TO-247AD package and suited to power conversion, motor drives and industrial switching environments where compact, mountable components are needed.
Features and Benefits:
• 700V drain rating enables high-voltage system designs
• 47A continuous drain current supports heavy-load switching
• 73mΩ Rds(on) minimises conduction losses under load
• 177nC typical gate charge reduces switching losses
• 500W maximum power dissipation handles elevated thermal load
• -55 to 175°C operating range sustains wide temperature extremes
• 47A continuous drain current supports heavy-load switching
• 73mΩ Rds(on) minimises conduction losses under load
• 177nC typical gate charge reduces switching losses
• 500W maximum power dissipation handles elevated thermal load
• -55 to 175°C operating range sustains wide temperature extremes
Applications
• Suitable for high-voltage power supplies and inverters
• Ideal for traction or industrial motor drive stages
• Used for hard-switching and soft-switching topologies
• Can be used for renewable energy converter electronics
• Appropriate for automotive electronic modules requiring AEC‑Q101
• Ideal for traction or industrial motor drive stages
• Used for hard-switching and soft-switching topologies
• Can be used for renewable energy converter electronics
• Appropriate for automotive electronic modules requiring AEC‑Q101
What mounting considerations apply to this component?
The device uses a through-hole mount in a TO-247AD package, allowing direct heatsinking with a suitable insulated or bare tab and conventional screw mounting for thermal management.
How does gate handling affect switching performance?
With a typical gate charge of 177nC, gate-driver selection must provide sufficient peak current to achieve the required dv/dt and minimise transition losses.
What thermal stresses can it tolerate during operation?
The transistor is specified to operate between -55°C and 175°C, so PCB layout and cooling must be designed to keep junction temperature within that range under rated dissipation.
Are there any automotive considerations for usage?
It meets AEC‑Q101 qualification, making it suitable for automotive electronic systems where the specified qualification is required.
관련된 링크들
- Vishay E Type N-Channel Power MOSFET, 47 A, 700 V Enhancement, 3-Pin TO-247AD SQW44N65EF-GE3
- Vishay E Type N-Channel Power MOSFET, 34 A, 700 V Enhancement, 3-Pin TO-247AD SQW33N65EF-GE3
- Vishay E N-Channel MOSFET, 62 A, 700 V Enhancement, 3-Pin TO-247 SQW61N65EF-GE3
- Vishay SIHG47N60EF-GE3, N-Channel IGBT, 3-Pin TO-247AC
- Vishay EF Type N-Channel MOSFET, 33 A, 600 V Enhancement, 3-Pin TO-247 SiHG33N60EF-GE3
- Vishay EF Type N-Channel MOSFET, 70 A, 600 V Enhancement, 3-Pin TO-247 SiHG70N60EF-GE3
- Vishay EF Type N-Channel MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-247 SiHG186N60EF-GE3
- Vishay SiHG052N60EF Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-247 SIHG052N60EF-GE3
