Vishay E N-Channel Power MOSFET, 34 A, 700 V Enhancement, 3-Pin TO-247AD SQW33N65EF-GE3

RS 제품 번호:: 228-2975
제조사 부품 번호:: SQW33N65EF-GE3
제조업체:: Vishay

Vishay E N-Channel Power MOSFET, 34 A, 700 V Enhancement, 3-Pin TO-247AD SQW33N65EF-GE3

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Subtotal (1 pack of 2 units)*

₩22,840.00

306 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
2 - 8	₩11,420.00	₩22,840.00
10 - 24	₩11,070.00	₩22,140.00
26 - 98	₩10,740.00	₩21,480.00
100 - 498	₩10,420.00	₩20,840.00
500 +	₩10,100.00	₩20,200.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 228-2975
제조사 부품 번호:: SQW33N65EF-GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	Power MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	34A
	Maximum Drain Source Voltage Vds	700V
	Package Type	TO-247AD
	Series	E
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	109mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	375W
	Typical Gate Charge Qg @ Vgs	115nC
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Vishay
	Product Type Power MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 34A
	Maximum Drain Source Voltage Vds 700V
	Package Type TO-247AD
	Series E
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 109mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 375W
	Typical Gate Charge Qg @ Vgs 115nC
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - SQW33N65EF-GE3

Vishay Series E Power MOSFET, 700V Drain Source Voltage, 34A Continuous Drain Current - SQW33N65EF-GE3

This power MOSFET is a high-voltage N-channel transistor designed for demanding power conversion and control roles. It operates across a wide ambient range and is supplied in a through-hole package suitable for heatsinking and robust mounting in industrial or automotive contexts. The device supports enhancement-mode switching for efficient high-voltage applications and is RoHS-compliant.

Features and Benefits:

• 700V drain capability enables high-voltage system design
• 34A continuous current handles substantial load currents
• 109mΩ Rds(on) reduces conduction losses during operation
• 375W power dissipation supports high-power switching cycles
• 115nC typical gate charge enables predictable gate-drive sizing
• 30V gate tolerance allows common gate-driver selection

Applications

• Suitable for high-voltage motor-drive stages
• Ideal for front-end power-factor correction circuits
• Used with switching supplies in renewable-energy inverters
• Can be used for automotive traction inverters requiring AEC-Q101
• Appropriate for industrial welding and plasma-power modules

What thermal range can it withstand in harsh installations?

It is rated to operate from -55°C up to 175°C, allowing use in both cold-start and high-heat environments.

Which package facilitates mounting and heat removal?

The TO-247AD through-hole package permits secure bolting to a heatsink for improved thermal management.

How does the channel type affect switching behaviour?

The N-channel enhancement-mode structure provides normally-off operation and efficient conduction when driven above the gate threshold.

Is it suitable for automotive qualification requirements?

It meets AEC-Q101 standards, making it appropriate for many vehicle electronics power stages.