제조사부품번호

Vishay E Type N-Channel MOSFET, 4.4 A, 850 V Enhancement, 3-Pin TO-252 SiHD5N80AE-GE3

RS 제품 번호:: 228-2852
제조사 부품 번호:: SiHD5N80AE-GE3
제조업체:: Vishay

Vishay E Type N-Channel MOSFET, 4.4 A, 850 V Enhancement, 3-Pin TO-252 SiHD5N80AE-GE3

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Subtotal (1 pack of 10 units)*

₩12,597.00

현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.

수량	한팩당	한팩당*
10 - 40	₩1,259.70	₩12,597.00
50 - 90	₩1,220.70	₩12,207.00
100 - 240	₩1,185.60	₩11,856.00
250 - 990	₩1,148.55	₩11,485.50
1000 +	₩1,115.40	₩11,154.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 228-2852
제조사 부품 번호:: SiHD5N80AE-GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4.4A
	Maximum Drain Source Voltage Vds	850V
	Package Type	TO-252
	Series	E
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.35Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	62.5W
	Typical Gate Charge Qg @ Vgs	11nC
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4.4A
	Maximum Drain Source Voltage Vds 850V
	Package Type TO-252
	Series E
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.35Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 62.5W
	Typical Gate Charge Qg @ Vgs 11nC
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - SiHD5N80AE-GE3

Vishay Series E Power MOSFET, 850V Maximum Drain Source Voltage, 4.4A Maximum Continuous Drain Current - SiHD5N80AE-GE3

This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power-conversion tasks in industrial electronics. It is supplied in a Compact surface-mount TO-252 package and is suited to applications that demand robust voltage handling and moderate continuous current capability in a small footprint.

Features and Benefits:

• 850V drain tolerance enables high-voltage system integration • 4.4A continuous drain current supports moderate load switching • 1.35Ω Rds(on) reduces conduction losses under load • 11nC typical gate charge allows efficient gate-drive design • 62.5W power dissipation manages thermal loading in Compact layouts • 150°C maximum junction temperature sustains high-temperature operation

Applications

• Suitable for SMPS and converters in industrial control systems • Ideal for flyback and boost topologies in power supplies • Used for line-side switching in LED drivers and lighting controls • Can be used for high-voltage pre-regulation stages in battery chargers

What gate-drive limits should be observed for safe operation?

The gate-source voltage must not exceed 30V to avoid gate-dielectric stress during switching transitions.

How does thermal margin affect PCB layout choices?

With a 62.5W dissipation rating and high junction capability, designers should provide adequate copper area or thermal vias to remove heat from the TO-252 land pattern.

Is this device suitable for automotive systems?

It is not specified for automotive-standard use and should not be selected where automotive qualification is mandatory.

What switching trade-offs arise from the gate-charge figure?

The 11nC gate charge balances switching speed and drive energy, requiring gate drivers sized for the desired rise/fall times and switching frequency.