제조사부품번호

Vishay E Type N-Channel MOSFET, 8 A, 850 V Enhancement, 3-Pin TO-252 SIHD11N80AE-T1-GE3

RS 제품 번호:: 228-2849
제조사 부품 번호:: SIHD11N80AE-T1-GE3
제조업체:: Vishay

Vishay E Type N-Channel MOSFET, 8 A, 850 V Enhancement, 3-Pin TO-252 SIHD11N80AE-T1-GE3

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Subtotal (1 pack of 5 units)*

₩18,739.50

현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.

수량	한팩당	한팩당*
5 - 45	₩3,747.90	₩18,739.50
50 - 95	₩3,638.70	₩18,193.50
100 - 245	₩3,525.60	₩17,628.00
250 - 995	₩3,420.30	₩17,101.50
1000 +	₩3,322.80	₩16,614.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 228-2849
제조사 부품 번호:: SIHD11N80AE-T1-GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	850V
	Package Type	TO-252
	Series	E
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	450mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	28nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	78W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 850V
	Package Type TO-252
	Series E
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 450mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 28nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 78W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - SIHD11N80AE-T1-GE3

Vishay Series E Power MOSFET, 850V Maximum Drain Source Voltage, 8A Maximum Continuous Drain Current - SIHD11N80AE-T1-GE3

This power MOSFET is a high-voltage N-channel switching transistor intended for surface-mount applications in industrial power designs. It operates as an enhancement-mode device and is suited to circuits requiring high drain-to-source voltage capability and moderate continuous current handling within elevated temperature environments.

Features and Benefits:

• 850V maximum drain-to-source voltage enables high-voltage switching applications • 8A continuous drain current supports moderate load-driving requirements • 450mΩ Rds(on) reduces conduction losses in high-voltage circuits • 78W maximum power dissipation permits higher thermal headroom • 30V gate tolerance allows robust gate-drive margins • 28nC typical gate charge aids predictable switching performance

Applications

• Suitable for high-voltage power supplies and converters • Ideal for industrial motor-drive front-ends • Used for electronic ballast and lighting controllers • Can be used for energy-management and power-conditioning modules • Suitable for mid-power inverter stages in automation systems

What mounting format does it use for PCB assembly?

It is supplied in a TO-252 surface-mount package with three pins for PCB soldering.

What temperature range can it withstand during operation?

It is specified for operation from -55°C up to a maximum of 150°C.

How does its gate characteristic affect switching design?

The typical gate charge of 28nC at the rated gate drive informs drive current and switching-loss estimates for gate driver selection.

What is the maximum continuous power the device can dissipate?

The device can dissipate up to 78W under appropriate thermal-management conditions.