제조사부품번호

Vishay SiHD2N80AE Type N-Channel MOSFET, 2.9 A, 800 V Enhancement, 3-Pin TO-252

RS 제품 번호:: 188-4874
제조사 부품 번호:: SIHD2N80AE-GE3
제조업체:: Vishay

Vishay SiHD2N80AE Type N-Channel MOSFET, 2.9 A, 800 V Enhancement, 3-Pin TO-252

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RS 제품 번호:: 188-4874
제조사 부품 번호:: SIHD2N80AE-GE3
제조업체:: Vishay

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	2.9A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-252
	Series	SiHD2N80AE
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	2.9Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	7nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	62.5W
	Maximum Gate Source Voltage Vgs	30 V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Height	2.25mm
	Standards/Approvals	No
	Width	6.22 mm
	Length	6.73mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 2.9A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-252
	Series SiHD2N80AE
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 2.9Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 7nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 62.5W
	Maximum Gate Source Voltage Vgs 30 V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Height 2.25mm
	Standards/Approvals No
	Width 6.22 mm
	Length 6.73mm
	Automotive Standard No

Datasheet SIHD2N80AE-GE3

E Series Power MOSFET.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Ciss)

Reduced switching and conduction losses

APPLICATIONS

Server and telecom power supplies

Switch mode power supplies (SMPS)

Power factor correction power supplies (PFC)

Vishay SiHD2N80AE Type N-Channel MOSFET, 2.9 A, 800 V Enhancement, 3-Pin TO-252

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