Infineon IPL60R Type N-Channel MOSFET, 28 A, 650 V Enhancement, 5-Pin ThinPAK
- RS 제품 번호:
- 222-4917
- 제조사 부품 번호:
- IPL65R070C7AUMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩18,572,520.00
일시적 품절
- 2027년 1월 08일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 12000 | ₩6,190.84 | ₩18,572,520.00 |
| 15000 + | ₩6,066.76 | ₩18,200,844.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 222-4917
- 제조사 부품 번호:
- IPL65R070C7AUMA1
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | ThinPAK | |
| Series | IPL60R | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 169W | |
| Maximum Operating Temperature | 150°C | |
| Length | 8.1mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Width | 8.1 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type ThinPAK | ||
Series IPL60R | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 169W | ||
Maximum Operating Temperature 150°C | ||
Length 8.1mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Width 8.1 mm | ||
Automotive Standard No | ||
The Infineon CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds' lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.
Revolutionary best-in-class R DS(on)/package
Reduced energy stored in output capacitance (Eoss)
Lower gate charge Qg
Space saving through use of smaller packages or reduction of parts
12 years manufacturing experience in superjunction technology
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