제조사부품번호

Infineon IPL60R Type N-Channel MOSFET, 28 A, 650 V Enhancement, 5-Pin ThinPAK IPL65R070C7AUMA1

RS 제품 번호:: 222-4918
제조사 부품 번호:: IPL65R070C7AUMA1
제조업체:: Infineon

Infineon IPL60R Type N-Channel MOSFET, 28 A, 650 V Enhancement, 5-Pin ThinPAK IPL65R070C7AUMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩14,325.60

재고있음

94 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
2 - 8	₩7,162.80	₩14,325.60
10 - 98	₩7,031.20	₩14,062.40
100 - 248	₩6,899.60	₩13,799.20
250 - 498	₩6,777.40	₩13,554.80
500 +	₩6,664.60	₩13,329.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 222-4918
제조사 부품 번호:: IPL65R070C7AUMA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	28A
	Maximum Drain Source Voltage Vds	650V
	Package Type	ThinPAK
	Series	IPL60R
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	70mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.8V
	Maximum Power Dissipation Pd	169W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	64nC
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	150°C
	Width	8.1 mm
	Height	1.1mm
	Standards/Approvals	No
	Length	8.1mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 28A
	Maximum Drain Source Voltage Vds 650V
	Package Type ThinPAK
	Series IPL60R
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 70mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.8V
	Maximum Power Dissipation Pd 169W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 64nC
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 150°C
	Width 8.1 mm
	Height 1.1mm
	Standards/Approvals No
	Length 8.1mm
	Automotive Standard No

Datasheet - IPL65R070C7AUMA1

The Infineon CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds' lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Revolutionary best-in-class R DS(on)/package

Reduced energy stored in output capacitance (Eoss)

Lower gate charge Qg

Space saving through use of smaller packages or reduction of parts

12 years manufacturing experience in superjunction technology

Infineon IPL60R Type N-Channel MOSFET, 28 A, 650 V Enhancement, 5-Pin ThinPAK IPL65R070C7AUMA1

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