Infineon IPL60R Type N-Channel MOSFET, 17 A, 600 V Enhancement, 5-Pin ThinPAK
- RS 제품 번호:
- 222-4913
- 제조사 부품 번호:
- IPL60R125C7AUMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩9,351,120.00
일시적 품절
- 2027년 1월 08일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 12000 | ₩3,117.04 | ₩9,352,812.00 |
| 15000 + | ₩3,055.00 | ₩9,165,564.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 222-4913
- 제조사 부품 번호:
- IPL60R125C7AUMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPL60R | |
| Package Type | ThinPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 103W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 8.1mm | |
| Height | 1.1mm | |
| Width | 8.1 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPL60R | ||
Package Type ThinPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 103W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 8.1mm | ||
Height 1.1mm | ||
Width 8.1 mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.
Reduced switching loss parameters such as Q G, C oss, E oss
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode
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