제조사부품번호

Infineon CoolMOS CSFD Type N-Channel MOSFET, 360 A, 650 V Enhancement, 3-Pin TO-247

RS 제품 번호:: 219-6016
제조사 부품 번호:: IPW60R024CFD7XKSA1
제조업체:: Infineon

Infineon CoolMOS CSFD Type N-Channel MOSFET, 360 A, 650 V Enhancement, 3-Pin TO-247

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 tube of 30 units)*

₩377,992.80

재고있음

30 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
30 - 60	₩12,599.76	₩378,009.72
90 - 120	₩12,114.72	₩363,458.52
150 +	₩11,962.44	₩358,873.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 219-6016
제조사 부품 번호:: IPW60R024CFD7XKSA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	360A
	Maximum Drain Source Voltage Vds	650V
	Series	CoolMOS CSFD
	Package Type	TO-247
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	24mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	320W
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	183nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	21.1 mm
	Length	16.13mm
	Height	5.21mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 360A
	Maximum Drain Source Voltage Vds 650V
	Series CoolMOS CSFD
	Package Type TO-247
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 24mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 320W
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 183nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 21.1 mm
	Length 16.13mm
	Height 5.21mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPW60R024CFD7XKSA1

The Infineon CoolMOS CFD7 Superjunction MOSFET IPW60R024CFD7 in 600V is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behaviour and up to 69% reduced reverse recovery charge compared to competitors.

Ultra-fast body diode

Best-in-class reverse recovery charge (Qrr)

Improved reverse diode dv/dt and dif/dt ruggedness

Infineon CoolMOS CSFD Type N-Channel MOSFET, 360 A, 650 V Enhancement, 3-Pin TO-247

관련된 링크들