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Infineon Dual CoolMOS 2 Type N-Channel Power Transistor, 20 A, 100 V Enhancement, 8-Pin TDSON IPG20N10S4L22ATMA1

RS 제품 번호:: 222-4681
제조사 부품 번호:: IPG20N10S4L22ATMA1
제조업체:: Infineon

Infineon Dual CoolMOS 2 Type N-Channel Power Transistor, 20 A, 100 V Enhancement, 8-Pin TDSON IPG20N10S4L22ATMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩19,458.00

재고있음

7,850 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
10 - 10	₩1,945.80	₩19,454.24
20 - 90	₩1,896.92	₩18,969.20
100 - 240	₩1,849.92	₩18,497.32
250 - 490	₩1,802.92	₩18,034.84
500 +	₩1,757.80	₩17,583.64

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 222-4681
제조사 부품 번호:: IPG20N10S4L22ATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	Power Transistor
	Maximum Continuous Drain Current Id	20A
	Maximum Drain Source Voltage Vds	100V
	Series	CoolMOS
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	22mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	21nC
	Maximum Power Dissipation Pd	60W
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Operating Temperature	175°C
	Transistor Configuration	Dual
	Length	5.15mm
	Standards/Approvals	AEC-Q101
	Height	1mm
	Width	5.9 mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type Power Transistor
	Maximum Continuous Drain Current Id 20A
	Maximum Drain Source Voltage Vds 100V
	Series CoolMOS
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 22mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 21nC
	Maximum Power Dissipation Pd 60W
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Operating Temperature 175°C
	Transistor Configuration Dual
	Length 5.15mm
	Standards/Approvals AEC-Q101
	Height 1mm
	Width 5.9 mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

Datasheet - IPG20N10S4L22ATMA1

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)

MSL1 up to 260°C peak reflow AEC Q101 qualified

OptiMOS™ - power MOSFET for automotive applications

Infineon Dual CoolMOS 2 Type N-Channel Power Transistor, 20 A, 100 V Enhancement, 8-Pin TDSON IPG20N10S4L22ATMA1

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