Infineon Dual OptiMOS 2 Type N-Channel Power Transistor, 20 A, 40 V Enhancement, 8-Pin TDSON IPG20N04S4L07AATMA1

RS 제품 번호:: 220-7422
제조사 부품 번호:: IPG20N04S4L07AATMA1
제조업체:: Infineon

Infineon Dual OptiMOS 2 Type N-Channel Power Transistor, 20 A, 40 V Enhancement, 8-Pin TDSON IPG20N04S4L07AATMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩20,191.20

재고있음

4,960 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
10 - 1240	₩2,019.12	₩20,200.60
1250 - 2490	₩1,970.24	₩19,694.88
2500 +	₩1,938.28	₩19,390.32

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 220-7422
제조사 부품 번호:: IPG20N04S4L07AATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	Power Transistor
	Channel Type	Type N
	Maximum Continuous Drain Current Id	20A
	Maximum Drain Source Voltage Vds	40V
	Series	OptiMOS
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	7.2mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Power Dissipation Pd	65W
	Typical Gate Charge Qg @ Vgs	39nC
	Forward Voltage Vf	0.9V
	Transistor Configuration	Dual
	Maximum Operating Temperature	175°C
	Height	1mm
	Width	5.9 mm
	Standards/Approvals	RoHS
	Length	5.15mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type Power Transistor
	Channel Type Type N
	Maximum Continuous Drain Current Id 20A
	Maximum Drain Source Voltage Vds 40V
	Series OptiMOS
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 7.2mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Power Dissipation Pd 65W
	Typical Gate Charge Qg @ Vgs 39nC
	Forward Voltage Vf 0.9V
	Transistor Configuration Dual
	Maximum Operating Temperature 175°C
	Height 1mm
	Width 5.9 mm
	Standards/Approvals RoHS
	Length 5.15mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

Datasheet - IPG20N04S4L07AATMA1

The Infineon offers a wide range of 20V-40V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in a variety of packages to meet a range of needs and achieving RDS(on) down to 0.6mΩ.The new OptiMOS 6 and Optimos5 40V benchmark MOSFET technology enables low conduction losses (best in Class RDSon performance), low switching losses (improved switching behaviour), improved diode recovery and EMC behaviour. This MOSFET technology is used in the most advanced and innovative packages in order to reach the best product performances and quality. For ultimate design flexibility, automotive-qualified MOSFETs are available in a variety of packages to meet a range of needs. Infineon offer customers a steady stream of improvements in current capability, switching behaviour, reliability, package size and overall quality. The newly developed integrated half-bridge is an innovative and cost efficient package solution for motor drive and body applications.

Dual N-channel Logic Level - Enhancement mode

MSL1 up to 260°C peak reflow

175°C operating temperature

Infineon Dual OptiMOS 2 Type N-Channel Power Transistor, 20 A, 40 V Enhancement, 8-Pin TDSON IPG20N04S4L07AATMA1

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