제조사부품번호

Infineon Dual CoolMOS 2 Type N-Channel Power Transistor, 20 A, 100 V Enhancement, 8-Pin TDSON

RS 제품 번호:: 222-4680
제조사 부품 번호:: IPG20N10S4L22ATMA1
제조업체:: Infineon

Infineon Dual CoolMOS 2 Type N-Channel Power Transistor, 20 A, 100 V Enhancement, 8-Pin TDSON

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대량 구매 할인 기용 가능

Subtotal (1 reel of 5000 units)*

₩5,602,400.00

재고있음

추가로 2026년 1월 05일 부터 5,000 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
5000 - 5000	₩1,120.48	₩5,598,640.00
10000 - 10000	₩1,090.40	₩5,455,760.00
15000 +	₩1,077.24	₩5,386,200.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 222-4680
제조사 부품 번호:: IPG20N10S4L22ATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	Power Transistor
	Channel Type	Type N
	Maximum Continuous Drain Current Id	20A
	Maximum Drain Source Voltage Vds	100V
	Series	CoolMOS
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	22mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	16 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	60W
	Typical Gate Charge Qg @ Vgs	21nC
	Transistor Configuration	Dual
	Maximum Operating Temperature	175°C
	Standards/Approvals	AEC-Q101
	Length	5.15mm
	Width	5.9 mm
	Height	1mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type Power Transistor
	Channel Type Type N
	Maximum Continuous Drain Current Id 20A
	Maximum Drain Source Voltage Vds 100V
	Series CoolMOS
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 22mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 16 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 60W
	Typical Gate Charge Qg @ Vgs 21nC
	Transistor Configuration Dual
	Maximum Operating Temperature 175°C
	Standards/Approvals AEC-Q101
	Length 5.15mm
	Width 5.9 mm
	Height 1mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

Datasheet - IPG20N10S4L22ATMA1

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)

MSL1 up to 260°C peak reflow AEC Q101 qualified

OptiMOS™ - power MOSFET for automotive applications

Infineon Dual CoolMOS 2 Type N-Channel Power Transistor, 20 A, 100 V Enhancement, 8-Pin TDSON

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