제조사부품번호

Infineon CoolMOS N-Channel MOSFET, 1.9 A, 80 V Enhancement, 3-Pin TO-252 IPD80R2K8CEATMA1

RS 제품 번호:: 222-4675
제조사 부품 번호:: IPD80R2K8CEATMA1
제조업체:: Infineon

Infineon CoolMOS N-Channel MOSFET, 1.9 A, 80 V Enhancement, 3-Pin TO-252 IPD80R2K8CEATMA1

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 pack of 15 units)*

₩23,430.00

1,875 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
15 - 15	₩1,562.00	₩23,420.00
30 - 75	₩1,536.00	₩23,040.00
90 - 225	₩1,506.00	₩22,580.00
240 - 465	₩1,480.00	₩22,200.00
480 +	₩1,452.00	₩21,780.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 222-4675
제조사 부품 번호:: IPD80R2K8CEATMA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1.9A
	Maximum Drain Source Voltage Vds	80V
	Series	CoolMOS
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	2.8Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	42W
	Typical Gate Charge Qg @ Vgs	12nC
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Width	6.22mm
	Length	6.73mm
	Height	2.41mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1.9A
	Maximum Drain Source Voltage Vds 80V
	Series CoolMOS
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 2.8Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 42W
	Typical Gate Charge Qg @ Vgs 12nC
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Width 6.22mm
	Length 6.73mm
	Height 2.41mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPD80R2K8CEATMA1

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)

MSL1 up to 260°C peak reflow AEC Q101 qualified

OptiMOS™ - power MOSFET for automotive applications

Infineon CoolMOS N-Channel MOSFET, 1.9 A, 80 V Enhancement, 3-Pin TO-252 IPD80R2K8CEATMA1

대량 구매 가격 책정 옵션

관련된 링크들