Infineon CoolMOS CE Type N-Channel MOSFET, 5.7 A, 800 V Enhancement, 3-Pin TO-252 IPD80R1K0CEATMA1

RS 제품 번호:: 914-0223
제조사 부품 번호:: IPD80R1K0CEATMA1
제조업체:: Infineon

Infineon CoolMOS CE Type N-Channel MOSFET, 5.7 A, 800 V Enhancement, 3-Pin TO-252 IPD80R1K0CEATMA1

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩13,084.80

재고있음

추가로 2025년 12월 29일 부터 2,260 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
10 - 620	₩1,308.48	₩13,084.80
630 - 1240	₩1,274.64	₩12,746.40
1250 +	₩1,255.84	₩12,558.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 914-0223
제조사 부품 번호:: IPD80R1K0CEATMA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	5.7A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-252
	Series	CoolMOS CE
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	950mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	31nC
	Maximum Power Dissipation Pd	83W
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Operating Temperature	150°C
	Width	6.22 mm
	Length	6.73mm
	Height	2.41mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 5.7A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-252
	Series CoolMOS CE
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 950mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 31nC
	Maximum Power Dissipation Pd 83W
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Operating Temperature 150°C
	Width 6.22 mm
	Length 6.73mm
	Height 2.41mm
	Standards/Approvals No
	Automotive Standard No

해당 안됨

Infineon CoolMOS™ CE Series MOSFET, 5.7A Maximum Continuous Drain Current, 83W Maximum Power Dissipation - IPD80R1K0CEATMA1

This MOSFET provides solutions for power management and general electronics, leveraging Advanced CoolMOS CE technology with high voltage capabilities up to 800V. It boasts high efficiency and low on-state resistance, optimising design while enhancing reliability.

Features & Benefits

• Increased power density allows for more Compact system designs

• Reduced cooling requirements lead to cost savings for systems

• Lower operating temperatures enhance system reliability

• High Peak current capability supports rigorous applications

• Reliable dv/dt rating ensures stability under Rapid voltage changes

• Complies with RoHS standards for environmentally sound use

Applications

• Used in LED lighting solutions for retrofit installations

• Suitable for QR flyback topology in power supplies

• Effective within automotive power distribution systems

• Ideal for various high-voltage industrial

How does the MOSFET enhance system performance in power management?

It improves power density and reduces thermal requirements, leading to enhanced efficiency and lower energy losses during operation.

What are the benefits of using this device in LED lighting applications?

It delivers dependable performance with less heat generation, contributing to longevity and stability in lighting systems.

Is this compatible with high-frequency applications?

Yes, its low gate charge and high Peak current capabilities make it apt for high-frequency operations, ensuring minimal switching losses.

What is the maximum continuous drain current for this device?

The maximum continuous drain current is rated at 5.7A, making it suitable for various power-intensive applications.

What temperature range can it operate within?

It operates effectively between -55°C and +150°C, offering versatility across different environments.