onsemi NTMFS1D7N Type N-Channel MOSFET, 170 A, 30 V Enhancement, 5-Pin DFN NTMFS1D7N03CGT1G
- RS 제품 번호:
- 221-6730
- 제조사 부품 번호:
- NTMFS1D7N03CGT1G
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩13,533.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 10 | ₩1,353.30 | ₩13,533.00 |
| 20 - 90 | ₩1,329.90 | ₩13,299.00 |
| 100 - 240 | ₩1,304.55 | ₩13,045.50 |
| 250 - 490 | ₩1,283.10 | ₩12,831.00 |
| 500 + | ₩1,259.70 | ₩12,597.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 221-6730
- 제조사 부품 번호:
- NTMFS1D7N03CGT1G
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 170A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | NTMFS1D7N | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.74mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Maximum Power Dissipation Pd | 87W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.3mm | |
| Height | 6.3mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 170A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series NTMFS1D7N | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.74mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Maximum Power Dissipation Pd 87W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 5.3mm | ||
Height 6.3mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Automotive Standard No | ||
The ON Semiconductor 30V of power MOSFET used 170 A of drain current with single N−channel. It improve inrush current management and improve system efficiency.
Low RDS(on) to minimize conduction losses
Low capacitance to minimize driver losses
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