N-Channel MOSFET, 113 A, 100 V, 5-Pin DFN onsemi NTMFS4D2N10MDT1G

The ON Semiconductor N-Channel MV MOSFET is produced using an advanced power trench process that incorporates shielded gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with very low Qg and Qoss.

Low RDS(on) to minimize conduction losses
Low QG and capacitance to minimize driver losses
Low QRR, soft recovery body diode

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