onsemi NTMFS Type N-Channel MOSFET, 233 A, 40 V Enhancement, 5-Pin DFN-5 NTMFS1D1N04XMT1G
- RS 제품 번호:
- 220-597
- 제조사 부품 번호:
- NTMFS1D1N04XMT1G
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 tape of 10 units)*
₩21,898.50
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | Per Tape* |
|---|---|---|
| 10 - 90 | ₩2,189.85 | ₩21,898.50 |
| 100 - 240 | ₩2,078.70 | ₩20,787.00 |
| 250 - 490 | ₩2,035.80 | ₩20,358.00 |
| 500 - 990 | ₩1,996.80 | ₩19,968.00 |
| 1000 + | ₩1,955.85 | ₩19,558.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 220-597
- 제조사 부품 번호:
- NTMFS1D1N04XMT1G
- 제조업체:
- onsemi
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 233A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NTMFS | |
| Package Type | DFN-5 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.05mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 49.1nC | |
| Maximum Power Dissipation Pd | 104W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 6.15mm | |
| Height | 1mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 233A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NTMFS | ||
Package Type DFN-5 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.05mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 49.1nC | ||
Maximum Power Dissipation Pd 104W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 6.15mm | ||
Height 1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The ON Semiconductor Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Halogen Free
RoHS Compliant
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