제조사부품번호

Infineon CoolMOS C7 Type N-Channel MOSFET & Diode, 49 A, 700 V Enhancement, 3-Pin TO-252

RS 제품 번호:: 220-7408
제조사 부품 번호:: IPD65R190C7ATMA1
제조업체:: Infineon

Infineon CoolMOS C7 Type N-Channel MOSFET & Diode, 49 A, 700 V Enhancement, 3-Pin TO-252

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 reel of 2500 units)*

₩4,648,300.00

일시적 품절

2026년 5월 04일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
2500 - 2500	₩1,859.32	₩4,649,710.00
5000 - 7500	₩1,823.60	₩4,556,650.00
10000 +	₩1,786.00	₩4,465,470.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 220-7408
제조사 부품 번호:: IPD65R190C7ATMA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	49A
	Maximum Drain Source Voltage Vds	700V
	Package Type	TO-252
	Series	CoolMOS C7
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	900mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	23nC
	Maximum Power Dissipation Pd	72mW
	Standards/Approvals	No
	Length	6.73mm
	Width	6.22 mm
	Height	2.41mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 49A
	Maximum Drain Source Voltage Vds 700V
	Package Type TO-252
	Series CoolMOS C7
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 900mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 23nC
	Maximum Power Dissipation Pd 72mW
	Standards/Approvals No
	Length 6.73mm
	Width 6.22 mm
	Height 2.41mm
	Automotive Standard No

Datasheet - IPD65R190C7ATMA1

The Infineon Cool MOS C7 super junction MOSFET series is a revolutionary step forward in technology, providing the worlds' lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

650V voltage

Revolutionary best-in-class R DS(on)/package

Reduced energy stored in output capacitance (Eoss)

Lower gate charge Qg

Space saving through use of smaller packages or reduction of parts

12 years manufacturing experience in super junction technology

Improved safety margin and suitable for both SMPS and solar inverter applications

Lowest conduction losses/package

Low switching losses

Better light load efficiency

Increasing power density

Outstanding Cool MOS™ quality

Infineon CoolMOS C7 Type N-Channel MOSFET & Diode, 49 A, 700 V Enhancement, 3-Pin TO-252

관련된 링크들