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Infineon CoolMOS C7 Type N-Channel MOSFET & Diode, 49 A, 700 V Enhancement, 3-Pin TO-252 IPD65R190C7ATMA1

RS 제품 번호:: 220-7409
제조사 부품 번호:: IPD65R190C7ATMA1
제조업체:: Infineon

Infineon CoolMOS C7 Type N-Channel MOSFET & Diode, 49 A, 700 V Enhancement, 3-Pin TO-252 IPD65R190C7ATMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩18,668.40

재고있음

2,465 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
5 - 620	₩3,733.68	₩18,668.40
625 - 1245	₩3,639.68	₩18,198.40
1250 +	₩3,583.28	₩17,916.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 220-7409
제조사 부품 번호:: IPD65R190C7ATMA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	49A
	Maximum Drain Source Voltage Vds	700V
	Series	CoolMOS C7
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	900mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	23nC
	Maximum Power Dissipation Pd	72mW
	Maximum Gate Source Voltage Vgs	20 V
	Standards/Approvals	No
	Height	2.41mm
	Length	6.73mm
	Width	6.22 mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 49A
	Maximum Drain Source Voltage Vds 700V
	Series CoolMOS C7
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 900mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 23nC
	Maximum Power Dissipation Pd 72mW
	Maximum Gate Source Voltage Vgs 20 V
	Standards/Approvals No
	Height 2.41mm
	Length 6.73mm
	Width 6.22 mm
	Automotive Standard No

Datasheet - IPD65R190C7ATMA1

The Infineon Cool MOS C7 super junction MOSFET series is a revolutionary step forward in technology, providing the worlds' lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

650V voltage

Revolutionary best-in-class R DS(on)/package

Reduced energy stored in output capacitance (Eoss)

Lower gate charge Qg

Space saving through use of smaller packages or reduction of parts

12 years manufacturing experience in super junction technology

Improved safety margin and suitable for both SMPS and solar inverter applications

Lowest conduction losses/package

Low switching losses

Better light load efficiency

Increasing power density

Outstanding Cool MOS™ quality

Infineon CoolMOS C7 Type N-Channel MOSFET & Diode, 49 A, 700 V Enhancement, 3-Pin TO-252 IPD65R190C7ATMA1

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