Infineon CoolMOS P7 N-Channel MOSFET, 4 A, 950 V Enhancement, 3-Pin TO-252 IPD95R2K0P7ATMA1

RS 제품 번호:: 219-5994
제조사 부품 번호:: IPD95R2K0P7ATMA1
제조업체:: Infineon

Infineon CoolMOS P7 N-Channel MOSFET, 4 A, 950 V Enhancement, 3-Pin TO-252 IPD95R2K0P7ATMA1

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Subtotal (1 reel of 2500 units)*

₩2,160,000.00

추가로 2026년 10월 05일 부터 5,000 개 단위 배송

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수량	한팩당	릴당*
2500 - 10000	₩864.00	₩2,161,000.00
12500 +	₩848.00	₩2,117,500.00

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RS 제품 번호:: 219-5994
제조사 부품 번호:: IPD95R2K0P7ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	4A
	Maximum Drain Source Voltage Vds	950V
	Package Type	TO-252
	Series	CoolMOS P7
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	2mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	10nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	37W
	Forward Voltage Vf	900mV
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Height	2.41mm
	Width	6.22mm
	Standards/Approvals	No
	Length	6.73mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 4A
	Maximum Drain Source Voltage Vds 950V
	Package Type TO-252
	Series CoolMOS P7
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 2mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 10nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 37W
	Forward Voltage Vf 900mV
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Height 2.41mm
	Width 6.22mm
	Standards/Approvals No
	Length 6.73mm
	Automotive Standard No

Datasheet - IPD95R2K0P7ATMA1

Infineon CoolMOS P7 Series MOSFET, 950V Drain Source Voltage, 4A Continuous Drain Current - IPD95R2K0P7ATMA1

This MOSFET is a high-voltage N-channel enhancement transistor designed for switching and power conversion in demanding electronic systems. It operates across a wide ambient range and is intended for surface-mounted applications where a compact, thermally capable switching device is required.

Features and Benefits:

• 950V drain-source rating enables high-voltage switching applications
• 2mΩ Rds(on) minimises conduction losses during high-current operation
• 10nC gate charge reduces drive energy and switching-related losses
• 4A continuous drain current supports moderate load currents reliably
• 37W maximum power dissipation allows significant thermal headroom
• 20V gate-source capability accommodates common gate drive voltages

Applications

• Suitable for high-voltage power supplies and converters
• Ideal for switch-mode power supply primary switches
• Used with industrial motor-drive front-ends
• Can be used for energy conversion in renewable systems
• Suitable for Compact surface-mount power modules

What temperature extremes can it tolerate in operation?

It is rated to operate from −55°C up to 150°C, enabling use in wide thermal envelopes.

How is it packaged for PCB assembly?

It comes in a TO-252 surface-mount package suitable for soldered board mounting.

What forward conduction characteristic is typical when conducting?

The device exhibits a forward voltage of 0.9V during conduction under appropriate conditions.

How many electrical connections does it present for circuit integration?

It provides three pins for standard MOSFET Terminal connections.