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Infineon CoolMOS P7 Type N-Channel MOSFET, 4 A, 950 V Enhancement, 3-Pin TO-252 IPD95R2K0P7ATMA1

RS 제품 번호:: 219-5995
제조사 부품 번호:: IPD95R2K0P7ATMA1
제조업체:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET, 4 A, 950 V Enhancement, 3-Pin TO-252 IPD95R2K0P7ATMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 15 units)*

₩19,147.80

재고있음

7,365 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
15 - 15	₩1,276.52	₩19,157.20
30 - 75	₩1,244.56	₩18,668.40
90 - 225	₩1,212.60	₩18,198.40
240 - 465	₩1,184.40	₩17,766.00
480 +	₩1,154.32	₩17,314.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 219-5995
제조사 부품 번호:: IPD95R2K0P7ATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	4A
	Maximum Drain Source Voltage Vds	950V
	Series	CoolMOS P7
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	2mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	10nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	37W
	Forward Voltage Vf	0.9V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	6.73mm
	Width	6.22 mm
	Height	2.41mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 4A
	Maximum Drain Source Voltage Vds 950V
	Series CoolMOS P7
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 2mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 10nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 37W
	Forward Voltage Vf 0.9V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 6.73mm
	Width 6.22 mm
	Height 2.41mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPD95R2K0P7ATMA1

The Infineon designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.

Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

Infineon CoolMOS P7 Type N-Channel MOSFET, 4 A, 950 V Enhancement, 3-Pin TO-252 IPD95R2K0P7ATMA1

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