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Infineon IPD Type N-Channel MOSFET, 14 A, 950 V Enhancement, 3-Pin TO-252 IPD95R450P7ATMA1

RS 제품 번호:: 217-2536
제조사 부품 번호:: IPD95R450P7ATMA1
제조업체:: Infineon

Infineon IPD Type N-Channel MOSFET, 14 A, 950 V Enhancement, 3-Pin TO-252 IPD95R450P7ATMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩27,598.40

재고있음

1,640 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
10 - 620	₩2,759.84	₩27,598.40
630 - 1240	₩2,692.16	₩26,921.60
1250 +	₩2,648.92	₩26,489.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 217-2536
제조사 부품 번호:: IPD95R450P7ATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	14A
	Maximum Drain Source Voltage Vds	950V
	Series	IPD
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	450mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	35nC
	Maximum Power Dissipation Pd	104W
	Forward Voltage Vf	0.9V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Width	6.22 mm
	Length	6.73mm
	Standards/Approvals	No
	Height	2.41mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 14A
	Maximum Drain Source Voltage Vds 950V
	Series IPD
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 450mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 35nC
	Maximum Power Dissipation Pd 104W
	Forward Voltage Vf 0.9V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Width 6.22 mm
	Length 6.73mm
	Standards/Approvals No
	Height 2.41mm
	Automotive Standard AEC-Q101

Datasheet - IPD95R450P7ATMA1

The Infineon latest 950V CoolMOS™ P7 series sets a new bench mark in 950V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.

Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and CossBest-in-class DPAK RDS(on) of 450 mΩ

Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

Infineon IPD Type N-Channel MOSFET, 14 A, 950 V Enhancement, 3-Pin TO-252 IPD95R450P7ATMA1

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