Infineon HEXFET N-Channel MOSFET, 6 A, 500 V, 3-Pin TO-252 IRFR825TRPBF
- RS 제품 번호:
- 218-3116
- 제조사 부품 번호:
- IRFR825TRPBF
- 제조업체:
- Infineon
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- RS 제품 번호:
- 218-3116
- 제조사 부품 번호:
- IRFR825TRPBF
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.3Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 119W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Width | 4.83mm | |
| Height | 9.65mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.3Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 119W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Width 4.83mm | ||
Height 9.65mm | ||
Automotive Standard No | ||
The Infineon HEXFET series single N-channel power MOSFET integrated with DPAK (TO-252) type package. This MOSFET is mainly used in UPS, SMPS etc.
Lower gate charge results in simpler drive requirements.
Higher gate voltage threshold offers improved noise immunity.
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