제조사부품번호

Infineon Dual N Channel Mosfet HEXFET 2 Type N-Channel MOSFET, 5.1 A, 55 V Enhancement, 8-Pin SO-8 IRF7341GTRPBF

RS 제품 번호:: 217-2603
제조사 부품 번호:: IRF7341GTRPBF
제조업체:: Infineon

Infineon Dual N Channel Mosfet HEXFET 2 Type N-Channel MOSFET, 5.1 A, 55 V Enhancement, 8-Pin SO-8 IRF7341GTRPBF

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대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩18,931.60

재고있음

20 개 단위 배송 준비 완료
추가로 2026년 1월 05일 부터 5,890 개 단위 배송

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수량	한팩당	한팩당*
10 - 990	₩1,893.16	₩18,931.60
1000 - 1990	₩1,846.16	₩18,461.60
2000 +	₩1,817.96	₩18,179.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 217-2603
제조사 부품 번호:: IRF7341GTRPBF
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	5.1A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	65mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	2.4W
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	29nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Transistor Configuration	Dual N Channel Mosfet
	Standards/Approvals	No
	Width	4 mm
	Length	5mm
	Height	1.5mm
	Number of Elements per Chip	2
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 5.1A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 65mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 2.4W
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 29nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Transistor Configuration Dual N Channel Mosfet
	Standards/Approvals No
	Width 4 mm
	Length 5mm
	Height 1.5mm
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet - IRF7341GTRPBF

The Infineon HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.

Advanced Process Technology

Dual N-Channel MOSFET

Ultra Low On-Resistance

175°C Operating Temperature

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

Infineon Dual N Channel Mosfet HEXFET 2 Type N-Channel MOSFET, 5.1 A, 55 V Enhancement, 8-Pin SO-8 IRF7341GTRPBF

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