제조사부품번호

Infineon IPN Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin SOT-223 IPN60R360P7SATMA1

RS 제품 번호:: 217-2543
제조사 부품 번호:: IPN60R360P7SATMA1
제조업체:: Infineon

Infineon IPN Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin SOT-223 IPN60R360P7SATMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 20 units)*

₩21,996.00

재고있음

추가로 2025년 12월 29일 부터 5,720 개 단위 배송

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수량	한팩당	한팩당*
20 - 740	₩1,099.80	₩21,996.00
760 - 1480	₩1,071.60	₩21,450.80
1500 +	₩1,056.56	₩21,131.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 217-2543
제조사 부품 번호:: IPN60R360P7SATMA1
제조업체:: Infineon

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	9A
	Maximum Drain Source Voltage Vds	600V
	Package Type	SOT-223
	Series	IPN
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	360mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	111W
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	36nC
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	150°C
	Length	8.8mm
	Width	8.8 mm
	Height	1.1mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 9A
	Maximum Drain Source Voltage Vds 600V
	Package Type SOT-223
	Series IPN
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 360mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 111W
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 36nC
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 150°C
	Length 8.8mm
	Width 8.8 mm
	Height 1.1mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPN60R360P7SATMA1

The Infineon CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications.

Best-fit performance superjunction technology

Cost-effective package solution

Best-in-class price/performance ratio

Infineon IPN Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin SOT-223 IPN60R360P7SATMA1

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