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Infineon IPL Type N-Channel MOSFET, 27 A, 600 V Enhancement, 5-Pin ThinPAK IPL60R125P7AUMA1

RS 제품 번호:: 217-2538
제조사 부품 번호:: IPL60R125P7AUMA1
제조업체:: Infineon

Infineon IPL Type N-Channel MOSFET, 27 A, 600 V Enhancement, 5-Pin ThinPAK IPL60R125P7AUMA1

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Subtotal (1 pack of 5 units)*

₩17,935.20

재고있음

2,940 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
5 - 745	₩3,587.04	₩17,935.20
750 - 1495	₩3,496.80	₩17,484.00
1500 +	₩3,440.40	₩17,202.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 217-2538
제조사 부품 번호:: IPL60R125P7AUMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	27A
	Maximum Drain Source Voltage Vds	600V
	Series	IPL
	Package Type	ThinPAK
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	125mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	111W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	36nC
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	150°C
	Width	8.8 mm
	Length	8.8mm
	Standards/Approvals	No
	Height	1.1mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 27A
	Maximum Drain Source Voltage Vds 600V
	Series IPL
	Package Type ThinPAK
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 125mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 111W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 36nC
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 150°C
	Width 8.8 mm
	Length 8.8mm
	Standards/Approvals No
	Height 1.1mm
	Automotive Standard No

Datasheet - IPL60R125P7AUMA1

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Suitable for hard and soft switching(PFC and LLC)due to an outstanding  commutation ruggedness

Significant reduction of switching and conduction losses

Excellent ESD robustness > 2kV (HBM) for all products

Better RDS(on)/package products compared to competition enabled by a

low RDS(on)*A(below1Ohm*mm²)

Fully qualified acc. JEDEC for Industrial Applications

Infineon IPL Type N-Channel MOSFET, 27 A, 600 V Enhancement, 5-Pin ThinPAK IPL60R125P7AUMA1

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