Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 80 A, 30 V Enhancement, 8-Pin PDFN56 TSM055N03EPQ56
- RS 제품 번호:
- 216-9664
- 제조사 부품 번호:
- TSM055N03EPQ56
- 제조업체:
- Taiwan Semiconductor
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대량 구매 할인 기용 가능
Subtotal (1 pack of 25 units)*
₩58,045.00
일시적 품절
- 1,625 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 25 - 600 | ₩2,321.80 | ₩58,058.16 |
| 625 - 1225 | ₩2,263.52 | ₩56,606.80 |
| 1250 + | ₩2,229.68 | ₩55,742.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 216-9664
- 제조사 부품 번호:
- TSM055N03EPQ56
- 제조업체:
- Taiwan Semiconductor
사양
참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Taiwan Semiconductor | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PDFN56 | |
| Series | TSM025 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 74W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 11.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Width | 5 mm | |
| Length | 6mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Taiwan Semiconductor | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PDFN56 | ||
Series TSM025 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 74W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 11.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Width 5 mm | ||
Length 6mm | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Halogen-free according to IEC 61249-2-21
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