Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 55 A, 30 V Enhancement, 8-Pin PDFN56 TSM080N03EPQ56
- RS 제품 번호:
- 216-9672
- 제조사 부품 번호:
- TSM080N03EPQ56
- 제조업체:
- Taiwan Semiconductor
대량 구매 할인 기용 가능
Subtotal (1 pack of 50 units)*
₩107,912.00
단종되는 중
- 최종적인 6,600 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 50 - 600 | ₩2,158.24 | ₩107,865.00 |
| 650 - 1200 | ₩2,103.72 | ₩105,167.20 |
| 1250 + | ₩2,071.76 | ₩103,559.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 216-9672
- 제조사 부품 번호:
- TSM080N03EPQ56
- 제조업체:
- Taiwan Semiconductor
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Taiwan Semiconductor | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PDFN56 | |
| Series | TSM025 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 54W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 155°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC | |
| Height | 1mm | |
| Width | 5 mm | |
| Length | 6mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Taiwan Semiconductor | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PDFN56 | ||
Series TSM025 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 54W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 155°C | ||
Standards/Approvals IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC | ||
Height 1mm | ||
Width 5 mm | ||
Length 6mm | ||
Automotive Standard No | ||
not founs
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
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