Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 46 A, 100 V Enhancement, 8-Pin PDFN56
- RS 제품 번호:
- 216-9697
- 제조사 부품 번호:
- TSM160N10LCR
- 제조업체:
- Taiwan Semiconductor
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- RS 제품 번호:
- 216-9697
- 제조사 부품 번호:
- TSM160N10LCR
- 제조업체:
- Taiwan Semiconductor
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Taiwan Semiconductor | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PDFN56 | |
| Series | TSM025 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 83W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.2mm | |
| Width | 5.2 mm | |
| Standards/Approvals | RoHS 2011/65/EU and in accordance to WEEE 2002/96/EC | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Taiwan Semiconductor | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PDFN56 | ||
Series TSM025 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 83W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 6.2mm | ||
Width 5.2 mm | ||
Standards/Approvals RoHS 2011/65/EU and in accordance to WEEE 2002/96/EC | ||
Height 1.1mm | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for Metal Oxide Semiconductor Field-Effect Transistors. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
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