Infineon HEXFET N-Channel MOSFET, 42 A, 55 V Enhancement, 3-Pin TO-252 IRLR2905TRLPBF

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

모든 MOSFETs 열람하기
현재 비가용
RS는 이 제품을 더 이상 판매하지 않습니다.
포장 옵션
RS 제품 번호:
215-2607
제조사 부품 번호:
IRLR2905TRLPBF
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Series

HEXFET

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current (Id)

42 A

Maximum Drain Source Voltage (Vds)

55 V

Channel Mode

Enhancement

Pin Count

3

Package Type

TO-252

Automotive Standard

No

Forward Voltage (Vf)

1.3 V

Maximum Drain Source Resistance (Rds)

27 mΩ

Maximum Gate Source Voltage (Vgs)

20 V

Maximum Operating Temperature

175 °C

Maximum Power Dissipation (Pd)

110 W

Minimum Operating Temperature

-55 °C

Mount Type

Surface

Standards/Approvals

EIA-481, EIA-541

Typical Gate Charge (Qg) @ Vgs

48 nC

The Infineon HEXFET Power MOSFET series has 55V maximum drain source voltage it is a single N-Channel HEXFET Power MOSFET in a D-Pak package type. The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-pack is designed for surface mounting using vapour phase, infrared or wave soldering technique.

Advanced Process Technology

Ultra Low On-Resistance

Lead-Free

Fully avalanche rated

관련된 링크들