Infineon HEXFET Type N-Channel MOSFET, 99 A, 60 V TO-252 IRLR3636TRLPBF
- RS 제품 번호:
- 257-9458
- 제조사 부품 번호:
- IRLR3636TRLPBF
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩7,632.80
재고있음
- 2,835 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 45 | ₩1,526.56 | ₩7,632.80 |
| 50 - 95 | ₩1,451.36 | ₩7,256.80 |
| 100 - 245 | ₩1,361.12 | ₩6,805.60 |
| 250 - 995 | ₩1,267.12 | ₩6,335.60 |
| 1000 + | ₩1,165.60 | ₩5,828.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 257-9458
- 제조사 부품 번호:
- IRLR3636TRLPBF
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 99A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Maximum Drain Source Resistance Rds | 8.3mΩ | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 143W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 99A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Maximum Drain Source Resistance Rds 8.3mΩ | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 143W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRLR series is the 60V single n channel power mosfet in a D-Pak package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface mount package
Silicon optimized for applications switching below 100 kHz
관련된 링크들
- Infineon HEXFET Type N-Channel MOSFET, 99 A, 60 V TO-252
- Infineon HEXFET Type N-Channel MOSFET, 99 A, 60 V Enhancement, 3-Pin TO-252 IRLR3636TRPBF
- Infineon HEXFET Type N-Channel MOSFET, 99 A, 60 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET, 42 A, 55 V Enhancement, 3-Pin TO-252 IRLR2905TRLPBF
- Infineon HEXFET Type N-Channel MOSFET, 17 A, 100 V Enhancement, 3-Pin TO-252 IRLR3410TRLPBF
- Infineon HEXFET Type N-Channel MOSFET, 17 A, 100 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET, 89 A, 55 V TO-252 IRLR3705ZTRPBF
- Infineon HEXFET Type N-Channel MOSFET, 130 A, 40 V TO-252 IRLR3114ZTRPBF
