Infineon HEXFET Type N-Channel MOSFET, 59 A, 55 V Enhancement, 3-Pin TO-252 IRFR2905ZTRPBF

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Subtotal (1 pack of 20 units)*

₩30,832.00

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20 - 480₩1,541.60₩30,832.00
500 - 980₩1,504.00₩30,061.20
1000 +₩1,479.56₩29,591.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
217-2620
Distrelec 제품 번호:
304-39-420
제조사 부품 번호:
IRFR2905ZTRPBF
제조업체:
Infineon
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

59A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

14.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

110W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

29nC

Maximum Operating Temperature

175°C

Height

2.39mm

Length

6.73mm

Standards/Approvals

No

Width

6.22 mm

Automotive Standard

No

The Infineon HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead Free

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