제조사부품번호

Infineon HEXFET Type N-Channel MOSFET, 59 A, 55 V Enhancement, 3-Pin TO-252 IRFR2905ZTRPBF

RS 제품 번호:: 217-2620
제조사 부품 번호:: IRFR2905ZTRPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 59 A, 55 V Enhancement, 3-Pin TO-252 IRFR2905ZTRPBF

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대량 구매 할인 기용 가능

Subtotal (1 pack of 20 units)*

₩30,832.00

재고있음

1,580 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
20 - 480	₩1,541.60	₩30,832.00
500 - 980	₩1,504.00	₩30,061.20
1000 +	₩1,479.56	₩29,591.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 217-2620
제조사 부품 번호:: IRFR2905ZTRPBF
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	59A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	14.5mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	110W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	29nC
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Height	2.39mm
	Length	6.73mm
	Standards/Approvals	No
	Width	6.22 mm
	Automotive Standard	No
	Distrelec Product Id	304-39-420

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 59A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 14.5mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 110W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 29nC
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Height 2.39mm
	Length 6.73mm
	Standards/Approvals No
	Width 6.22 mm
	Automotive Standard No
	Distrelec Product Id 304-39-420

Datasheet - IRFR2905ZTRPBF

The Infineon HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead Free

Infineon HEXFET Type N-Channel MOSFET, 59 A, 55 V Enhancement, 3-Pin TO-252 IRFR2905ZTRPBF

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