Infineon 700V CoolMOS P7 Type N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin SOT-223

RS 제품 번호:: 215-2525
제조사 부품 번호:: IPN70R360P7SATMA1
제조업체:: Infineon

Infineon 700V CoolMOS P7 Type N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin SOT-223

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₩2,160,000.00

3,000 개 단위 배송 준비 완료

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RS 제품 번호:: 215-2525
제조사 부품 번호:: IPN70R360P7SATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	12.5A
	Maximum Drain Source Voltage Vds	700V
	Series	700V CoolMOS P7
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	360mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	16.4nC
	Maximum Power Dissipation Pd	7.2W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 12.5A
	Maximum Drain Source Voltage Vds 700V
	Series 700V CoolMOS P7
	Package Type SOT-223
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 360mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 16.4nC
	Maximum Power Dissipation Pd 7.2W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPN70R360P7SATMA1

Infineon 700V CoolMOS P7 Series MOSFET, 700V Maximum Drain Source Voltage, 12.5A Maximum Continuous Drain Current - IPN70R360P7SATMA1

This MOSFET is a high-voltage N-channel switching device designed for surface-mount power applications. It operates across an extended ambient temperature range and is suited to circuits requiring robust voltage handling, low forward conduction drop and controlled gate driving. The component is supplied in a compact SOT-223 package intended for board-mounted power stages.

Features and Benefits:

• 700V rated drain tolerance enables high-voltage switching
• 360mΩ Rds(on) reduces conduction losses during load cycles
• 12.5A continuous drain current supports moderate power throughput
• 16.4nC typical gate charge allows predictable switching behaviour
• 0.9V forward voltage reduces voltage drop in conduction mode
• 7.2W maximum dissipation manages thermal load in compact layouts

Applications

• Suitable for offline switch-mode power supplies
• Ideal for high-voltage primary-side converters
• Used with resonant or hard-switching topologies
• Can be used for auxiliary power rails in industrial systems
• Used for medium-current boost and flyback stages

What gate voltage limits must be observed for safe operation?

The device must not be driven beyond ±20V between gate and source to prevent gate oxide stress.

How does the device behave across temperature extremes?

It is specified to operate from -55°C up to 150°C, allowing use in both cold-start and high-temperature environments with degraded Rds(on) expected at elevated temperatures.

What mounting considerations are relevant for thermal management?

As a surface-mount SOT-223 package, adequate copper area and thermal vias on the PCB are recommended to dissipate up to the 7.2W power limit.

How does gate charge influence drive requirements?

The typical 16.4nC gate charge defines the drive current and switching losses, informing the selection of gate drivers and snubbers for desired switching speed.